Repeller, cathode, chamber wall and slit member for ion implanter and ion generating devices including the same

ABSTRACT

Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Division of application Ser. No. 15/742,283, filedJan. 5, 2018, which in turn claims the benefit of Korean PatentApplication No. 10-2015-0040377, filed Mar. 23, 2015, InternationalApplication No. PCT/KR2016/006190 filed on Jun. 10, 2016, which in turnclaims the benefit of Korean Application No. 10-2015-0096699, filed onJul. 7, 2015, Korean Application No. 10-2015-0096700, filed on Jul. 7,2015, Korean Application No. 10-2015-0096701, filed on Jul. 7, 2015,Korean Application No. 10-2015-0096702, filed on Jul. 7, 2015, thedisclosures of which are incorporated by reference into the presentapplication.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a repeller, a cathode, a chamber wall,and a slit member for an ion implanter and ion generating devicesincluding the same. More specifically, the present invention relates toelements for an ion implanter, such as a repeller, a cathode, a chamberwall, and a slit member constituting an arc chamber of an ion generatingdevice for ion implantation used in the fabrication of a semiconductordevice, wherein a coating structure including a semicarbide layer isprovided to each of the elements in order to stabilize the elementagainst thermal deformation, protect the element from wear, and preventa deposition product from being peeled off so that precise ionimplantation is enabled without a change in the position of iongeneration or distortion of the equipment, electrons can be uniformlyreflected into the arc chamber to increase the uniformity of plasma,resulting in an improvement in the dissociation efficiency of an ionsource gas, and the service life of the element can be significantlyimproved compared to those of existing elements, and ion generatingdevices including the elements.

2. Description of the Related Art

A semiconductor device fabrication method essentially includes twoprocesses: deposition and ion implantation. The deposition process is aprocess for forming a conductive or insulating film of a semiconductordevice. For example, the deposition process is sputtering or chemicalvapor deposition. A photo process is carried out to pattern aphotosensitive resin through a patterned photomask before etching. Thesubsequent etching is a process for patterning the underlying conductiveor insulating film using the photosensitive resin pattern.

The ion implantation process is a process for controlling the operatingcharacteristics of the electronic device fabricated on a silicon wafer.Conventional ion implantation processes are based on thermal diffusionto dope dopants into films while recent ion implantation processes arebased on the penetration of ions with a constant energy into films todope the films with dopants.

Dopant doping processes based on ion implantation provide better controlover the concentration of dopants and are advantageous in controlling orlimiting the doping depth of dopants compared to those based on thermaldiffusion. Ion implanters for ion implantation include an ion generationunit where ions are generated to doping dopants and an ion analysis unitwhere the kind and energy of the generated ions are controlled.

In the ion generating device, a filament is heated to emitthermoelectrons, which are accelerated by an electric field to collidewith an ion source gas to generate ions. Thermoelectrons can be directlyemitted by heating a tungsten filament. The thermoelectrons emitted fromthe tungsten filament may be accelerated toward a cathode, from whichelectrons are secondarily emitted. The secondary electron emission canprevent the filament material from degradation, extending thereplacement cycle of the element.

The ion source gas introduced into the ion generating device collideswith electrons emitted from the cathode and is dissociated. Taking intoconsideration a high processing temperature (≥1500° C.) of an arcchamber, elements constituting the arc chamber are made of refractorymetals, such as molybdenum (Mo), W (tungsten), tantalum (Ta), rhenium(Re), and niobium (Nb), as base materials. The chamber is subjected toloading due to its heavy weight and is likely to thermally deform. As aresult, the position of ion generation is changed and even the arcchamber is distorted, making it difficult to achieve precise ionimplantation.

For example, U.S. Patent Publication No. 2011-0139613 describes arepeller for an ion implanter that is made of tungsten, a kind ofrefractory metal. This patent publication discloses the use of tungstenor carbon as a material for an electrode body of the repeller but thematerial is provided merely for structural improvement (e.g.,miniaturization) of the repeller and is not associated with qualityimprovement.

As another example, Korean Patent No. 10-0553716 discloses a front platefor an ion implanter that is made of tungsten. This patent provides asolution to the problem of the increased maintenance and repair cost ofthe equipment caused by frequent replacement of front plates, achievinggood beam uniformity, and proposes a new structure of an element inwhich a desired shape of the element is made of a particular metal basematerial that is relatively easy to process and then tungsten isdeposited on the surface of the metal base material, which correspondsto the inner side of a chamber body, by coating to form a thin film,achieving good beam uniformity, instead of producing the element usingonly a refractory metal. However, since the internal temperature of thechamber body increases to or above 900° C. and ions continuously strikethe inner wall of the chamber body, the chamber body made of theconductive metal base material is very disadvantageous in dissipatingheat and is easily embedded with a dopant, causing contamination orpitting of the inner wall of the chamber body. Particularly, whenoverheated, the internal materials reach their limits where they canresist, resulting in damage to the element. In this connection, variouscoating techniques have been proposed but involve the use of expensivecoating equipment and precious raw material powders.

In an ion implanter having a slit through which ion beams are emitted,different coefficients of thermal expansion of carbon and a refractorymetal material cause thermal deformation with a high load when used in ahigh-temperature process. As a result, the position of ion emission ischanged and the equipment is distorted as a whole, making it impossibleto achieve precise ion implantation. Further, peeling occurs at theinterface between the carbon layer and the refractory metal coatinglayer, resulting in the formation of debris particles. Thus, there is adanger that defects will be formed during semiconductor manufacturingand the durability of semiconductor equipment will deteriorate.

There is thus an urgent need to develop a repeller, an electron emittingcathode, a chamber wall, and a slit member by which precise ionimplantation is enabled without a change in the position of iongeneration or distortion of the equipment, electrons can be uniformlyreflected into an arc chamber to increase the uniformity of plasma,resulting in an improvement in the dissociation efficiency of an ionsource gas, and the service lives of the elements can be significantlyimproved compared to those of existing elements, and ion generatingdevices including the elements.

SUMMARY OF THE INVENTION

Therefore, it is a first object of the present invention to provide arepeller, a cathode, a chamber wall, and a slit member for an ionimplanter that are stable against thermal deformation, are protectedfrom wear, and prevent a deposition product from being peeled offdespite long-term use of the ion implanter without replacement of theelements.

It is a second object of the present invention to provide ion generatingdevices including the repeller, the cathode, the chamber wall, and theslit member.

One aspect of the present invention provides a repeller for an ionimplanter including: a reflective part placed inside an arc chamber ofan ion generating device for the ion implanter and opposite a cathode ofthe ion generating device; and a terminal part extending from thereflective part and to which a predetermined voltage is applied, whereinthe reflective part has a refractory metal material as a base materialforming its shape and has a coating structure including a semicarbidelayer on at least one surface of the base material.

A further aspect of the present invention provides an electron emittingcathode mounted inside an arc chamber of an ion generating device for anion implanter and including a lateral portion fixed to one side of thearc chamber and defining a space where a filament is installed and afront portion exposed toward the arc chamber and having a surface fromwhich electrons are emitted wherein the cathode has a refractory metalmaterial as a base material forming its shape and has a coatingstructure including a semicarbide layer on at least one surface of thebase material.

Another aspect of the present invention provides a chamber wall mountedinside an arc chamber of an ion generating device for an ion implanterto define a space where ions are generated wherein the chamber wallcovers four sides of the arc chamber and its portion corresponding to atleast one of the four sides of the arc chamber has a refractory metalmaterial as a base material forming its shape and has a coatingstructure including a semicarbide layer on at least one surface of thebase material.

Another aspect of the present invention provides a slit member includinga slit through which ion beams are emitted from an ion generating devicefor an ion implanter wherein a slit portion formed with the slit has arefractory metal material as a base material forming its shape and has acoating structure including a semicarbide layer on at least one surfaceof the base material.

According to one embodiment of the present invention, the coatingstructure including a semicarbide layer may include a refractory metalcarbide structure in which a continuous or discontinuous refractorymetal monocarbide layer is layered on a continuous or discontinuousrefractory metal semicarbide layer.

According to a further embodiment of the present invention, the coatingstructure including a semicarbide layer may include a refractory metalcarbide structure in which a continuous or discontinuous layer having ahexagonal crystal structure is continuously or discontinuously layeredon a continuous or discontinuous layer having at least one crystalstructure selected from the group consisting of epsilon (ε-Fe₂N type)crystal structures and beta (PbO₂, Mo₂C, or C₆ type) crystal structures.

According to a further embodiment of the present invention, when theratio of the weight of the crystal structure constituting the refractorymetal monocarbide layer (Wm) to the weight of the crystal structureconstituting the refractory metal semicarbide layer (Ws) is defined as X(Wm/Ws), X may be equal to or lower than 5 (where Wm and Ws aredetermined by multi-phase electron backscatter diffraction (EBSD)analysis).

According to another embodiment of the present invention, the weight ofthe base material (Ww), the weight of the crystal structure constitutingthe refractory metal monocarbide layer (Wm), and the weight of thecrystal structure constituting the refractory metal semicarbide layer(Ws) may be in a ratio of 90-95:0.8-4:9.2-1 (Ww:Wm:Ws) (where Ww, Wm,and Ws are determined by multi-phase electron backscatter diffraction(EBSD) analysis).

According to another embodiment of the present invention, thesemicarbide coating layer may have a minimum thickness of 2 μm and amaximum thickness of 300 km.

According to another embodiment of the present invention, the terminalpart has a refractory metal material as a base material forming itsshape and has a coating structure including a semicarbide layer on atleast one surface of the base material.

Yet another aspect of the present invention provides an ion generatingdevice including the repeller.

The repeller, the cathode, the chamber wall, and the slit member of thepresent invention are elements constituting an arc chamber of an iongenerating device for ion implantation used in the fabrication of asemiconductor device and a coating structure including a semicarbidelayer is provided to each of the elements in order to stabilize theelement against thermal deformation, protect the element from wear, andprevent a deposition product from being peeled off so that precise ionimplantation is enabled without a change in the position of iongeneration or distortion of the equipment, electrons can be uniformlyreflected into the arc chamber to increase the uniformity of plasma,resulting in an improvement in the dissociation efficiency of an ionsource gas, and the service life of the element can be significantlyimproved compared to those of existing elements.

BRIEF DESCRIPTION OF THE DRAWINGS

The patent or application file contains at least one drawing executed incolor. Copies of this patent or patent application publication withcolor drawing(s) will be provided by the Office upon request and paymentof the necessary fee.

These and/or other aspects and advantages of the invention will becomeapparent and more readily appreciated from the following description ofthe embodiments, taken in conjunction with the accompanying drawings ofwhich:

FIG. 1 illustrates the structure of an ion generating device for an ionimplanter;

FIGS. 2a and 2b illustrate the structure of a repeller for an ionimplanter;

FIGS. 3a and 3b illustrate the structure of an electron emitting cathodefor an ion implanter;

FIG. 4 explains the density distribution of gas in an arc chamber;

FIG. 5 illustrates the structure of a slit member for an ion implanter;

FIGS. 6a and 6b show the surface of a coating structure including asemicarbide layer in which a monocarbide layer was layered on asemicarbide layer formed on the surface of a tungsten base material inExample 1-1, which were analyzed by electron backscatter diffraction(EBSD) using (a) a graphite sheet and (b) a carbon black powder; and

FIG. 7 shows XRD patterns of a coating structure including a semicarbidelayer on the surface of a tungsten base material in Example 1-1,indicating the presence of a monocarbide layer layered on a semicarbidelayer at an XRD penetration depth of up to 3 μm.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described in detail with reference tothe accompanying drawings.

The present invention is directed to a repeller, a cathode, a chamberwall, and a slit member as elements constituting an arc chamber of anion generating device for ion implantation in the fabrication of asemiconductor device that has a coating structure including asemicarbide layer wherein a coating structure including a semicarbidelayer is provided to each of the elements in order to stabilize theelement against thermal deformation, protect the element from wear, andprevent a deposition product from being peeled off so that precise ionimplantation is enabled without a change in the position of iongeneration or distortion of the equipment, electrons can be uniformlyreflected into the arc chamber to increase the uniformity of plasma,resulting in an improvement in the dissociation efficiency of an ionsource gas, and the service life of the element can be significantlyimproved compared to those of existing elements, and ion generatingdevices including the elements.

FIG. 1 illustrates the structure of an ion generating device for an ionimplanter. Referring to FIG. 1, the ion generating device 100 includesan arc chamber 104 defining a predetermined space, a cathode 102 mountedat one side of the arc chamber, a filament 101 installed in an innerspace of the cathode, and a repeller 103 mounted opposite the cathode.

The filament 101 may be made of a high melting point metal like tungstenand functions to emit thermoelectrons to the outside when heated to apredetermined temperature by an electric current flowing from anexternally connected power supply. The cathode 102 is spaced a distancefrom the filament 101. An anode of the external power supply isconnected to the cathode to create an electric field between thefilament and the cathode. By the electric field, thermoelectrons areemitted from the filament. The thermoelectrons collide with the cathodeand electrons are again emitted from the cathode surface. The electronsare emitted toward the space defined by the arc chamber 104. A dopinggas and a carrier gas are introduced into the space through a gas inlet105. A slit member 106 is disposed opposite the gas inlet. The gases andions and are emitted through the slit member.

A power supply unit is connected to the arc chamber 104 to acceleratethe electrons emitted from the cathode 102. The repeller 103 is mountedopposite the cathode 102 at one side of the arc chamber and functions torepel the accelerated electrons emitted from the cathode such that ionsare distributed in the limited space. A bias may be applied to thecathode or the electrons may be kept floating. Magnets 110 a and 110 bmay be installed around the arc chamber 104. The magnets may beelectromagnets and allow the accelerated moving electrons along theelectric field created inside the arc chamber 104 to rotate in thepresence of a magnetic field. The rotation of the electrons increasesthe probability that the electrons will collide with the gas particles,achieving high ionization efficiency. Although illustrated in thisfigure, an analyzer is installed in the slit member 106 through whichions are emitted. The analyzer accelerates ions in the presence of anelectric field and filters particular kinds of ions with a particularenergy.

The slit member 106 through which ions are emitted may be disposed onthe upper or lower surface of the arc chamber 104 and the gas inlet 105may be formed opposite the slit member 106.

FIG. 2 illustrates the structure of the repeller. Referring to FIG. 2,the repeller 103 includes a reflective part 103 a and a terminal part103 b. The reflective part 103 a is placed opposite the cathode and maytake the form of a plate (e.g., a disc) having a predetermined area andthickness. The terminal part 103 b is electrically connected to thereflective part and acts as both a terminal to which a predeterminedvoltage can be applied and a holder for holding the repeller 103 insidethe arc chamber 104.

As described above, the reflective part 103 a is placed opposite thecathode in the arc chamber 104 of the ion generating device and theterminal part 103 b extends from the reflective part 103 a. Apredetermined voltage can be applied to the terminal part 103 b. Thereflective part 103 a has a refractory metal material, such asmolybdenum (Mo), W (tungsten), tantalum (Ta), rhenium (Re) or niobium(Nb), as a base material forming its shape and has a coating structureincluding a semicarbide layer on at least one surface of the basematerial.

FIG. 3 illustrates the structure of the electron emitting cathode 102.Referring to FIG. 3, the cathode 102 consists of a lateral portion 102 ato provide an inner space where the filament 101 can be mounted and afront portion 102 b to provide a surface from which electrons areemitted.

The lateral portion 102 a may be in the form of a tube having apredetermined length. An inner space 102 d and a fastening portion 102 care formed in the cathode 102.

For example, the front portion 102 b may have a concave surface and mayinclude a rim, an inwardly slanted portion (not illustrated), and aconcave plateau (not illustrated). The rim 102 b is formed with apredetermined width at the periphery of the front portion, provides asmooth surface toward the arc chamber, and relatively protrudes towardthe arc chamber compared to the concave area. The rim 102 b preventsemitted electrons from being focused on one area due to its smoothsurface. If the rim is not formed and only the inwardly slanted portionis formed, the outermost portion of the cathode is acutely angled suchthat electrons are intensively emitted from the rim portion. Theinwardly slanted portion is inclined toward the center of the frontportion. This inclination increases the area of the cathode surface fromwhich electrons are mitted and allows electrons to be emitted from theslanted surface to the center of the cathode such that the electrons areaccelerated toward a region where the doping gas is densified. Theinwardly slanted portion is preferably concave toward the arc chamber.This structure is effective in controlling the position of electronemission to maximize the migration of electrons to a region where thedoping gas is densified. The concave plateau is formed at the center ofthe front portion of the cathode and has a smooth surface. The ratio ofthe width of the inwardly slanted portion to the radius of the concaveplateau can be adjusted such that improved ionization efficiency can beachieved. When the front portion is circular, the inwardly slantedportion and the concave plateau have the same center of curvature. Inthis case, the ratio of the radius of the concave plateau to the widthof the inwardly slanted portion may be, for example, in the range of1:0.5 to 1:1.5. Within this range, effective control over the directionof electron emission is enabled by the slanted portion and improvedionization efficiency can be ensured. The depression depth of theconcave plateau may be from 0.5 to 1.5 times the radius of the concaveplateau. In this case, the area of the cathode is increased andionization efficiency can be improved.

As described above, the cathode 102 is mounted inside the arc chamber104 of the ion generating device, the lateral portion of the cathode 102is fixed to one side of the arc chamber 104 and defines a space wherethe filament 101 is installed, and the front portion of the cathode isexposed toward the arc chamber and has a surface from which electronsare emitted. The cathode has a refractory metal material as a basematerial forming its shape and has a coating structure including asemicarbide layer on at least one surface of the base material.

FIG. 4 explains the density distribution of gas in the arc chamber.Referring to FIG. 4, a chamber wall 104 a is formed in the arc chamber104. The chamber wall 104 a covers four sides of the arc chamber 104.The gas inlet 105 and the slit member 106 through which ions are emittedare also formed in the arc chamber 104. A doping gas and a carrier gasenter through the gas inlet, are partially ionized, and are releasedthrough the slit member 106. At this time, a difference in gas pressurearises in the arc chamber 104. Specifically, the gas density (i.e. gaspressure) is high in a region close to the gas inlet 105. That is, thelarger the number of electrons accelerated toward a region where thedoping gas is densified, the higher the probability of ionization.

The chamber wall 104 a is mounted inside the arc chamber to define aspace where ions are generated in the ion generating device. The chamberwall portion corresponding to at least one of the four sides of the arcchamber has a refractory metal material as a base material forming itsshape and has a coating structure including a semicarbide layer on atleast one surface of the base material.

FIG. 5 illustrates the structure of the slit member. Referring to FIG.5, the slit member 106 has a slit portion 106 b formed with a slit 106a, a frame 106 c having a central insertion hole (not illustrated) intowhich the slit portion 106 b is fitted. The slit portion 106 b and theframe 106 c can be interconnected to each other through connectionmembers 106 d. The connection members 106 d may be screws. In this case,each of the slit portion 106 b and the frame 106 c may have a pluralityof screw holes (not illustrated) for the insertion of the screws. Theslit portion 106 b and the frame 106 c may be made of the same ordifferent materials.

Ion beams may be emitted from the ion generating device to the outsidethrough the slit of the slit member 106. The slit portion formed withthe slit has a refractory metal material as a base material forming itsshape and has a coating structure including a semicarbide layer on atleast one surface of the base material.

Unless otherwise specified, the term “coating structure including asemicarbide layer” as used herein refers to a structure in which asemicarbide layer is layered as an underlying coating layer. The coatingstructure including a semicarbide layer provides stability againstthermal deformation, wear resistance, and phase stability and prevents adeposition product from being peeled off while avoiding the use of anadditive or the formation of a protective/intermediate layer.

For example, the coating structure including a semicarbide layer mayhave a refractory metal carbide structure in which a continuous ordiscontinuous refractory metal monocarbide layer is layered on acontinuous or discontinuous refractory metal semicarbide layer. Thislayered structure provides improved stability against thermaldeformation and wear resistance and prevents a deposition product frombeing peeled off compared to a semicarbide or monocarbide monolayer.

As an alternative, the coating structure including a semicarbide layermay have a structure in which a continuous or discontinuous layer havinga hexagonal crystal structure is continuously or discontinuously layeredon a continuous or discontinuous layer having at least one crystalstructure selected from the group consisting of epsilon (ε-Fe₂N type)crystal structures and beta (PbO₂, Mo₂C, or C₆ type) crystal structures.Due to this continuously or discontinuously layered structure ofdifferent crystal structures, improved phase stability can be furtherprovided. Here, the bilayer is preferably a structure in which acontinuous layer having a hexagonal crystal structure is layered on acontinuous layer having an epsilon (ε-Fe₂N type) crystal structure.

When the ratio of the weight of the crystal structure constituting therefractory metal monocarbide layer (Wm) to the weight of the crystalstructure constituting the refractory metal semicarbide layer (Ws) isdefined as X (Wm/Ws), X may be equal to or lower than 5. When X is notgreater than 5, the layered structure provides improved stabilityagainst thermal deformation and wear resistance and prevents adeposition product from being peeled off. Here, Wm and Ws are determinedby multi-phase electron backscatter diffraction (EBSD) analysis.Specifically, X may be in the range of 0.01 to 5, 0.03 to 4, 0.1 to 4,0.05 to 0.3, or 0.1 to 0.2.

The weight of the base material (Ww), the weight of the crystalstructure constituting the refractory metal monocarbide layer (Wm), andthe weight of the crystal structure constituting the refractory metalsemicarbide layer (Ws) may be in a ratio of 90-95:0.8-4:9.2-1(Ww:Wm:Ws). In this ratio, the layered structure provides improvedstability against thermal deformation and wear resistance and prevents adeposition product from being peeled off. The weights Ww, Wm, and Ws aredetermined by multi-phase electron backscatter diffraction (EBSD)analysis. Specifically, the ratio Ww:Wm:Ws may be 91-94:0.8-3:8.2-3.

The continuous layer having a hexagonal crystal structure may have afirst peak with a maximum intensity in the range of 35° to 36° and asecond peak in the range of 48° to 50°, and a third peak in the range of31° to 32° (see the inner peaks in FIG. 7), as measured by XRD analysis.The continuous layer having at least one crystal structure selected fromthe group consisting of epsilon (ε-Fe₂N type) crystal structures andbeta (PbO₂, Mo₂C, or C₆ type) crystal structures may have a first peakwith a maximum intensity in the range of 69.5° to 70.0°, a second peakin the range of 39.5° to 40.0°, and a third peak in the range of 52.0°to 52.5° (see the bottom peaks in FIG. 7), as measured by XRD analysis.

The semicarbide layer preferably has a minimum thickness of ≥2 μm and amaximum thickness of ≤300 μm or ≤200 μm. Despite its very smallthickness, the semicarbide layer provides sufficiently improvedstability against thermal deformation, wear resistance, and phasestability and prevents a deposition product from being peeled off.Unless otherwise specified, the terms “minimum thickness” and “maximumthickness” as used herein refer to thicknesses of the thickest andthinnest portions of the layer, respectively. For example, the coatingstructure including a semicarbide layer may have a structure in which amonocarbide layer having a thickness of 1 to 10 μm is layered on asemicarbide layer having a thickness of 1 to 50 μm. Within thesethickness ranges, improved wear resistance can be provided and adeposition product can be prevented from being peeled off. Specifically,the coating structure including a semicarbide layer may have a structurein which a monocarbide layer having a thickness of 1 to 6 μm is layeredon a semicarbide layer having a thickness of 1 to 8 μm.

For reference, in the case where one or more elements of the repeller103, the cathode 102, the chamber wall 104 a, and the slit member 106constituting the arc chamber 104 of the ion generating device 100 have arefractory metal material as a base material forming their shapes andhave a coating structure including a semicarbide layer on at least onesurface of the base material, the other constituent elements of the arcchamber 104 may be made of a refractory metal material as a basematerial. If needed, the other constituent elements of the arc chamber104 may be made of a material having a coating structure including asemicarbide layer on at least one surface of the base material or anysuitable material known in the art, such as a carbon or carbon/hydrogencompound.

For example, the coating structure including a semicarbide layer may beformed by processing a refractory metal material as a base material intoa desired shape and annealing at least one surface of the base materialwith a carbon-containing material to form a layered coating layerincluding a semicarbide layer. As an example for the annealing with acarbon-containing material, carburization or chemical vapor depositionmay be performed using a graphite sheet or a carbon black powder to forma multilayer coating structure including the semicarbide layer as alowermost coating layer.

The multilayer coating structure including a semicarbide layer may havea minimum thickness of ≥2 μm and a maximum thickness of ≤300 μm. Theannealing with a carbon-containing material is preferably performedunder operating conditions where a monocarbide layer having a thicknessof 1 to 10 μm can be layered on a semicarbide layer having a thicknessof 1 to 30 μm to form a multilayer coating structure. More preferably,the annealing with a carbon-containing material is preferably performedunder operating conditions where a monocarbide layer having a thicknessof 1 to 6 μm can be layered on a semicarbide layer having a thickness of1 to 8 μm to form a coating structure. Specifically, the annealing maybe performed by heating to a maximum temperature of 1100 to 2200° C. ata heating rate of 1 to 100° C./min under vacuum or in an inertatmosphere for a dwell time of 0 second to 30 hours (here, “0 second”means instantaneous cooling) but is not limited to thesetemperature/pressure conditions. The annealing conditions may beadjusted within known ranges depending on such factors as the materialfor the repeller. The chemical vapor deposition may be performed usinghydrogen and a hydrogen/carbon compound in a ratio of 70:30 to 99.9:0.1at a temperature of 900 to 2200° C. and 10⁻² torr to less than 760 torrlower than the ambient pressure for 0 second to 30 hours but is notlimited to these temperature/pressure conditions. The chemical vapordeposition conditions may be adjusted within known ranges depending onsuch factors as the material for the repeller.

For reference, an explanation will be given concerning the deposition ofan ion source gas dissociated in the arc chamber on the repellersurface. First, an ion source gas is deposited in some areas. As thedeposition proceeds, the deposition films increase in area and meetdifferent deposition films to form a substantially uniform layer. Atthis time, some of the deposition films may be separated and peeled off.Cracks may occur in the uniform layer, causing some of the depositionfilms to be peeled off. When the elements for the ion implanter have arefractory metal material as a base material forming their shapes andhave a coating structure including a semicarbide layer on at least onesurface of the base material, they are effectively prevented from beingpeeled off.

The coating structure including a semicarbide layer is provided to eachof the repeller, the cathode, the chamber wall, and the slit memberconstituting the arc chamber of the ion generating device for ionimplantation used in the fabrication of a semiconductor device in orderto stabilize the element against thermal deformation, protect theelement from wear, and prevents a deposition product from being peeledoff, so that precise ion implantation is enabled without a change in theposition of ion generation or distortion of the equipment, electrons canbe uniformly reflected into the arc chamber to increase the uniformityof plasma, resulting in an improvement in the dissociation efficiency ofan ion source gas, and the service life of the element can besignificantly improved compared to those of existing elements.

The foregoing embodiments of the present invention and effects thereofwill be explained with reference to the following examples. Theseexamples are merely illustrative and the scope of the invention is notlimited thereto.

Example 1-1

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed. That is, the repeller 103including the reflective part 103 a having a circular surface with aradius of 12 mm and the cathode 102 having a circular surface with aradius of 10.85 mm were mounted opposite each other on both sidewalls.The reflective part 103 a illustrated in FIG. 2 was processed into adesired shape using a tungsten base material. A graphite sheet as acarbon-containing material was placed on the surface corresponding tothe inner side of the base material and was annealed by heating to amaximum temperature 1380° C. at a heating rate of 4.5° C./min for adwell time of 15 hr without the formation of an intermediate/protectivelayer to form a material having a bilayer coating structure in which atungsten monocarbide continuous or discontinuous layer was continuouslyor discontinuously layered on a tungsten semicarbide continuous ordiscontinuous layer. Then, the material having a bilayer coatingstructure was processed into a desired shape. The terminal part 103 bfor applying a predetermined voltage to the reflective part 103 a wasprocessed into a desired shape using a tungsten base material and wasintegrated with the reflective part 103 a.

(a) of FIG. 6 shows the surface of the coating structure in which thetungsten monocarbide continuous or discontinuous layer was continuouslyor discontinuously layered on the tungsten semicarbide continuous ordiscontinuous layer, which was analyzed by electron backscatterdiffraction (EBSD, JEOL, TSL model). As shown in (a) of FIG. 6, thetungsten semicarbide continuous or discontinuous layer was layered onthe tungsten layer, wherein the tungsten semicarbide represents by greencolor, and the tungsten monocarbide continuous or discontinuous layerwas continuously or discontinuously layered thereon, wherein thetungsten monocarbide represented by yellow color. As a result of phaseseparation for surface analysis by EBSD, the coating structure had amultilayer structure in which the monocarbide layer having a thicknessof ≤3 μm was layered on the semicarbide layer having a thickness of ≤8μm. The tungsten semicarbide and the tungsten monocarbide were found tohave epsilon (ε-Fe₂N type) and hexagonal phase (h-WC) crystalstructures, respectively (see FIG. 7).

The proportions of tungsten in the layers were calculated from theresults of phase separation using computer software, with the resultthat the content of tungsten in the tungsten layer (Ww) was 0.913distribution ratio, the content of tungsten in the crystal structureconstituting the tungsten semicarbide layer (Ws) was 0.079 distributionratio, and the content of tungsten in the crystal structure of thetungsten monocarbide layer (Wm) was 0.008 distribution ratio, from whichthe ratio of Ww:Wm:Ws was calculated to be 91.3:0.8:7.9.

The layered coating structure was analyzed by XRD. The results are shownin FIG. 7. FIG. 7 reveals that the coating structure had a multilayercoating structure in which the continuous or discontinuous layer havinga hexagonal crystal structure was continuously or discontinuouslylayered on the continuous or discontinuous layer having at least onecrystal structure selected from the group consisting of epsilon (ε-Fe₂Ntype) crystal structures and beta (PbO₂, Mo₂C, or C₆ type) crystalstructures at an XRD penetration depth of up to 3 μm.

Specifically, the tungsten monocarbide continuous or discontinuous layerhad a first peak with a maximum intensity in the range of 35° to 36°, asecond peak in the range of 48° to 49°, and a third peak in the range of31° to 32° (see the inner peaks in FIG. 7), as measured by XRD analysis.

No XRD peaks corresponding to tungsten semicarbide were observed in thetungsten semicarbide continuous or discontinuous layer because peakscorresponding to tungsten monocarbide overlapped peaks corresponding totungsten semicarbide. The tungsten semicarbide continuous ordiscontinuous layer had a first peak with a maximum intensity in therange of 69.5° to 70.0°, a second peak in the range of 39.5° to 40.0°,and a third peak in the range of 52.0° to 52.5° (see the bottom peaks inFIG. 7), as measured by XRD analysis. The proportions calculated fromthe results of phase separation for surface analysis by EBSD wereapplied to factor X (Wm/Ws, hereinafter referred to simply as “X”),which refers to the ratio of the weight of the crystal structureconstituting the tungsten monocarbide layer (Wm) and the weight of thecrystal structure constituting the tungsten semicarbide layer (Ws). Xwas calculated to be 0.1 (from 0.008/0.079).

Example 1-2

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed. That is, the repeller 103including the reflective part 103 a having a circular surface with aradius of 12 mm and the cathode 102 having a circular surface with aradius of 10.85 mm were mounted opposite each other on both sidewalls.The front portion 102 b of FIG. 3 was processed into a desired shapeusing a tungsten base material. A graphite sheet as a carbon-containingmaterial was placed on the surface corresponding to the inner side ofthe base material and was annealed by heating to a maximum temperature1380° C. at a heating rate of 4.5° C./min for a dwell time of 15 hrwithout the formation of an intermediate/protective layer to form amaterial having a bilayer coating structure in which a tungstenmonocarbide continuous or discontinuous layer was continuously ordiscontinuously layered on a tungsten semicarbide continuous ordiscontinuous layer. Then, the material having a bilayer coatingstructure was processed into a desired shape.

Example 1-3

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed. That is, the repeller 103including the reflective part 103 a having a circular surface with aradius of 12 mm and the cathode 102 having a circular surface with aradius of 10.85 mm were mounted opposite each other on both sidewalls.The chamber wall 104 a of FIG. 4 was processed into a desired shapeusing a tungsten base material. A graphite sheet as a carbon-containingmaterial was placed on the surface corresponding to the inner side ofthe base material and was annealed by heating to a maximum temperature1380° C. at a heating rate of 4.5° C./min for a dwell time of 15 hrwithout the formation of an intermediate/protective layer to form amaterial having a bilayer coating structure in which a tungstenmonocarbide continuous or discontinuous layer was continuously ordiscontinuously layered on a tungsten semicarbide continuous ordiscontinuous layer. Then, the material having a bilayer coatingstructure was processed into a desired shape.

Example 1-4

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed. That is, the repeller 103including the reflective part 103 a having a circular surface with aradius of 12 mm and the cathode 102 having a circular surface with aradius of 10.85 mm were mounted opposite each other on both sidewalls.The slit portion 106 b of FIG. 5 was processed into a desired shapeusing a tungsten base material. A graphite sheet as a carbon-containingmaterial was placed on the surface corresponding to the inner side ofthe base material and was annealed by heating to a maximum temperature1380° C. at a heating rate of 4.5° C./min for a dwell time of 15 hrwithout the formation of an intermediate/protective layer to form amaterial having a bilayer coating structure in which a tungstenmonocarbide continuous or discontinuous layer was continuously ordiscontinuously layered on a tungsten semicarbide continuous ordiscontinuous layer. Then, the material having a bilayer coatingstructure was processed into a desired shape.

Example 2-1

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-1, except that the repeller and the cathode having the same radiuswere used, each of the reflective part 103 a and the terminal part 103 bof FIG. 2 was processed into a desired shape using a tungsten basematerial, a carbon black powder as a carbon material was placed on thesurface corresponding to the inner side of the base material and wasannealed without the formation of an intermediate/protective layer toform a material having a bilayer coating structure in which a tungstenmonocarbide continuous or discontinuous layer was continuously ordiscontinuously layered on a tungsten semicarbide continuous ordiscontinuous layer, and the material having a bilayer coating structurewas processed into a desired shape.

Example 2-2

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-2, except that the repeller and the cathode having the same radiuswere used, the front portion 102 b of FIG. 3 was processed into adesired shape using a tungsten base material, a carbon black powder as acarbon material was placed on the surface corresponding to the innerside of the base material and was annealed without the formation of anintermediate/protective layer to form a material having a bilayercoating structure in which a tungsten monocarbide continuous ordiscontinuous layer was continuously or discontinuously layered on atungsten semicarbide continuous or discontinuous layer, and the materialhaving a bilayer coating structure was processed into a desired shape.

Example 2-3

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-3, except that the repeller and the cathode having the same radiuswere used, the chamber wall 104 a of FIG. 4 was processed into a desiredshape using a tungsten base material, a carbon black powder as a carbonmaterial was placed on the surface corresponding to the inner side ofthe base material and was annealed without the formation of anintermediate/protective layer to form a material having a bilayercoating structure in which a tungsten monocarbide continuous ordiscontinuous layer was continuously or discontinuously layered on atungsten semicarbide continuous or discontinuous layer, and the materialhaving a bilayer coating structure was processed into a desired shape.

Example 2-4

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-4, except that the repeller and the cathode having the same radiuswere used, the slit portion 106 b of FIG. 5 was processed into a desiredshape using a tungsten base material, a carbon black powder as a carbonmaterial was placed on the surface corresponding to the inner side ofthe base material and was annealed without the formation of anintermediate/protective layer to form a material having a bilayercoating structure in which a tungsten monocarbide continuous ordiscontinuous layer was continuously or discontinuously layered on atungsten semicarbide continuous or discontinuous layer, and the materialhaving a bilayer coating structure was processed into a desired shape.

Comparative Example 1-1

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-1, except that annealing was omitted, and as a result, the reflectivepart was made of only a tungsten base material without a coatingstructure including a semicarbide layer (here, factor X defined inExample 1-1 was 0 and the ratio of Ww:Wm:Ws was 100:0:0).

Comparative Example 1-2

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-2, except that annealing was omitted, and as a result, the frontportion was made of only a tungsten base material without a coatingstructure including a semicarbide layer (here, factor X defined inExample 1-2 was 0 and the ratio of Ww:Wm:Ws was 100:0:0).

Comparative Example 1-3

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-3, except that annealing was omitted, and as a result, the chamberwall was made of only a tungsten base material without a coatingstructure including a semicarbide layer (here, factor X defined inExample 1-3 was 0 and the ratio of Ww:Wm:Ws was 100:0:0).

Comparative Example 1-4

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-4, except that annealing was omitted, and as a result, the slitportion was made of only a tungsten base material without a coatingstructure including a semicarbide layer (here, factor X defined inExample 1-4 was 0 and the ratio of Ww:Wm:Ws was 100:0:0).

Comparative Example 2-1

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-1. The coating structure including a semicarbide layer on thereflective part formed in Example 1-1 was subjected to chemicalelectrolytic polishing or mechanical polishing for surface analysis byelectron backscatter diffraction (EBSD) to remove the uppermost tungstenmonocarbide layer and expose the tungsten semicarbide layer (here,factor X defined in Example 1-1 was 0). As a result of phase separationfor surface analysis by EBSD, the tungsten semicarbide layer was foundto have a thickness of ≤10.435 μm.

The proportions of tungsten in the layers were calculated from theresults of phase separation using computer software, with the resultthat the content of tungsten in the tungsten layer (Ww) was 0.879distribution ratio and the content of tungsten in the crystal structureconstituting the tungsten semicarbide layer (Ws) was 0.121 distributionratio, from which the ratio of Ww:Wm:Ws was calculated to be87.9:12.1:0.

The tungsten semicarbide was found to have an epsilon (ε-Fe₂N type)crystal structure. No XRD peaks corresponding to tungsten semicarbidewere observed in the layer having an epsilon (ε-Fe₂N type) crystalstructure because peaks corresponding to tungsten monocarbide overlappedpeaks corresponding to tungsten semicarbide. The layer having an epsilon(ε-Fe₂N type) crystal structure had a first peak with a maximumintensity in the range of 69.5° to 70.0°, a second peak in the range of39.5° to 40.0°, and a third peak in the range of 52.0° to 52.5°, asmeasured by XRD analysis.

Comparative Example 2-2

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-2. The coating structure including a semicarbide layer on the frontportion formed in Example 1-2 was subjected to chemical electrolyticpolishing or mechanical polishing for surface analysis by electronbackscatter diffraction (EBSD) to remove the uppermost tungstenmonocarbide layer and expose the tungsten semicarbide layer (here,factor X defined in Example 1-2 was 0). As a result of phase separationfor surface analysis by EBSD, the tungsten semicarbide layer was foundto have a thickness of ≤10.435 μm.

Comparative Example 2-3

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-3. The coating structure including a semicarbide layer on the chamberwall formed in Example 1-3 was subjected to chemical electrolyticpolishing or mechanical polishing for surface analysis by electronbackscatter diffraction (EBSD) to remove the uppermost tungstenmonocarbide layer and expose the tungsten semicarbide layer (here,factor X defined in Example 1-3 was 0). As a result of phase separationfor surface analysis by EBSD, the tungsten semicarbide layer was foundto have a thickness of ≤10.435 μm.

Comparative Example 2-4

An ion generating device for an ion implanter having the structureillustrated in FIG. 1 was constructed in the same manner as in Example1-4. The coating structure including a semicarbide layer on the slitportion formed in Example 1-4 was subjected to chemical electrolyticpolishing or mechanical polishing for surface analysis by electronbackscatter diffraction (EBSD) to remove the uppermost tungstenmonocarbide layer and expose the tungsten semicarbide layer (here,factor X defined in Example 1-4 was 0). As a result of phase separationfor surface analysis by EBSD, the tungsten semicarbide layer was foundto have a thickness of ≤10.435 μm.

Experimental Example 1-1

Each of the ion generating devices of Examples 1-1 and 2-1 andComparative Examples 1-1 and 2-2 was operated in an environment usingBF₃ as an ion source gas to ionize the ion source gas in the arcchamber. The ions escaped through the slit. After the ions were allowedto pass through an extraction electrode and a mass analyzer, the beamintensity was controlled and then the number of the ions was measuredusing a Faraday system. When the number of the ions to be injected waskept constant, stability against thermal deformation was judged to be“good”. When the material for the arc chamber was distorted by thermaldeformation, with the result that the number of the ions to be injectedwas irregular in decreasing and/or increasing cycles, stability againstthermal deformation was judged to be “poor”.

The cations present in the arc chamber collided with the cathode and/orthe repeller and the anions present in the arc chamber collided with thewalls of the arc chamber as an anode, causing sputtering by which thesurface atoms of the elements migrated. As a result of this sputtering,a deposition product was formed around the inner sides of the arcchamber and fell between the cathode and the anode to connect the twoelectrodes, causing electrical shorting. A voltage was applied to thearc chamber for 10 μmin and then the voltage application was stopped for5 min. This was defined as “one cycle”. When electrical shortingoccurred, the operation of the ion generating device was stopped. Atthis time, wear resistance was evaluated by measuring the number of thecycles.

The results obtained for the ion generating devices of Examples 1-1 and2-1 and Comparative Examples 1-1 and 2-1 are summarized in Table 1.

TABLE 1 Example Example Comparative Comparative Physical properties 1-12-1 Example 1-1 Example 2-1 Stability against Good Good Good Goodthermal deformation Wear resistance 221 244 195 206 (Number of cycles)

As can be seen from the results obtained in Experimental Example 1-1,the ion generating devices of Examples 1-1 and 2-1 had stability againstthermal deformation comparable to the ion generating devices ofComparative Examples 1-1 and 2-1. In addition, the ion generatingdevices of Examples 1-1 and 2-1 showed improved wear resistance comparedto the ion generating devices of Comparative Examples 1-1 and 2-1.

Experimental Example 1-2

The results obtained for the ion generating devices of Examples 1-2 and2-2 and Comparative Examples 1-2 and 2-2 are summarized in Table 2.

TABLE 2 Example Example Comparative Comparative Physical properties 1-22-2 Example 1-2 Example 2-2 Stability against Good Good Good Goodthermal deformation Wear resistance 223 245 196 207 (Number of cycles)

As can be seen from the results obtained in Experimental Example 1-2,the ion generating devices of Examples 1-2 and 2-2 had stability againstthermal deformation comparable to the ion generating devices ofComparative Examples 1-2 and 2-2. In addition, the ion generatingdevices of Examples 1-2 and 2-2 showed improved wear resistance comparedto the ion generating devices of Comparative Examples 1-2 and 2-2.

Experimental Example 1-3

The results obtained for the ion generating devices of Examples 1-3 and2-3 and Comparative Examples 1-3 and 2-3 are summarized in Table 3.

TABLE 3 Example Example Comparative Comparative Physical properties 1-32-3 Example 1-3 Example 2-3 Stability against Good Good Good Goodthermal deformation Wear resistance 221 245 196 207 (Number of cycles)

As can be seen from the results obtained in Experimental Example 1-3,the ion generating devices of Examples 1-3 and 2-3 had stability againstthermal deformation comparable to the ion generating devices ofComparative Examples 1-3 and 2-3. In addition, the ion generatingdevices of Examples 1-3 and 2-3 showed improved wear resistance comparedto the ion generating devices of Comparative Examples 1-3 and 2-3.

Experimental Example 1-4

The results obtained for the ion generating devices of Examples 1-4 and2-4 and Comparative Examples 1-4 and 2-4 are summarized in Table 4.

TABLE 4 Example Example Comparative Comparative Physical properties 1-42-4 Example 1-4 Example 2-4 Stability against Good Good Good Goodthermal deformation Wear resistance 222 245 197 208 (Number of cycles)

As can be seen from the results obtained in Experimental Example 1-4,the ion generating devices of Examples 1-4 and 2-4 had stability againstthermal deformation comparable to the ion generating devices ofComparative Examples 1-4 and 2-4. In addition, the ion generatingdevices of Examples 1-4 and 2-4 showed improved wear resistance comparedto the ion generating devices of Comparative Examples 1-4 and 2-4.

Experimental Example 2-1

During operation of the ion generating devices of Examples 1-1 and 2-1and Comparative Examples 1-1 and 2-1, the beam currents (mA) weremeasured to compare the efficiencies of ion generation. In each iongenerating device, the arc chamber had a width of 40 mm, a length of 105mm, and a height of 40 mm, the distance between the arc chamber and therepeller was 85 mm, BF₃ was used as an ion source gas, the pressure was2.5 torr, a voltage of 80 V was supplied to the arc chamber, a currentof 160 A was supplied to the filament, and a voltage of 600 V wassupplied to the cathode and the repeller.

The results obtained for the ion generating devices of Examples 1-1 and2-1 and Comparative Examples 1-1 and 2-1 are summarized in Table 5.

TABLE 5 Example Example Comparative Comparative 1-1 2-1 Example 1-1Example 2-1 Beam current (mA) 22.1 23.2 20.0 21.2

As can be seen from the results in Table 5, the efficiencies of iongeneration in the ion generating devices of Examples 1-1 and 2-1 werehigher than that in the ion generating device of Comparative Example1-1. Particularly, the efficiency of ion generation in the iongenerating device of Example 2-1 was relatively high.

Experimental Example 2-2

The results obtained for the ion generating devices of Examples 1-2 and2-2 and Comparative Examples 1-2 and 2-2 are summarized in Table 6.

TABLE 6 Example Example Comparative Comparative 1-2 2-2 Example 1-2Example 2-2 Beam current (mA) 22.0 23.2 20.0 21.2

As can be seen from the results in Table 6, the efficiencies of iongeneration in the ion generating devices of Examples 1-2 and 2-2 werehigher than that in the ion generating device of Comparative Example1-2. Particularly, the efficiency of ion generation in the iongenerating device of Example 2-2 was relatively high.

Experimental Example 2-3

The results obtained for the ion generating devices of Examples 1-3 and2-3 and Comparative Examples 1-3 and 2-3 are summarized in Table 7.

TABLE 7 Example Example Comparative Comparative 1-3 2-3 Example 1-3Example 2-3 Beam current (mA) 22.0 23.0 20.0 21.2

As can be seen from the results in Table 7, the efficiencies of iongeneration in the ion generating devices of Examples 1-3 and 2-3 werehigher than that in the ion generating device of Comparative Example1-3. Particularly, the efficiency of ion generation in the iongenerating device of Example 2-3 was relatively high.

Experimental Example 2-4

The results obtained for the ion generating devices of Examples 1-4 and2-4 and Comparative Examples 1-4 and 2-4 are summarized in Table 8.

TABLE 8 Example Example Comparative Comparative 1-4 2-4 Example 1-4Example 2-4 Beam current (mA) 22.0 23.1 20.0 21.3

As can be seen from the results in Table 8, the efficiencies of iongeneration in the ion generating devices of Examples 1-4 and 2-4 werehigher than that in the ion generating device of Comparative Example1-4. Particularly, the efficiency of ion generation in the iongenerating device of Example 2-4 was relatively high.

Although the spirit of the present invention has been described hereinwith reference to the foregoing embodiments, those skilled in the artwill appreciate that various changes and modifications are possible,without departing from the essential features of the present invention.Therefore, the embodiments do not serve to limit the spirit of theinvention and are set forth for illustrative purposes. The scope of theinvention is defined by the appended claims and all changes ormodifications or their equivalents made within the meanings and scope ofthe claims should be construed as falling within the scope of theinvention.

What is claimed is:
 1. A chamber wall mounted inside an arc chamber ofan ion generating device for an ion implanter to define a space whereions are generated wherein the chamber wall covers four sides of the arcchamber and its portion corresponding to at least one of the four sidesof the arc chamber has a refractory metal material as a base materialforming its shape and has a coating structure comprising a semicarbidelayer on at least one surface of the base material.
 2. The chamber wallaccording to claim 1, wherein the coating structure comprising asemicarbide layer comprises a refractory metal carbide structure inwhich a continuous or discontinuous refractory metal monocarbide layeris layered on a continuous or discontinuous refractory metal semicarbidelayer.
 3. The chamber wall according to claim 1, wherein the coatingstructure comprising a semicarbide layer comprises a refractory metalcarbide structure in which a continuous or discontinuous layer having ahexagonal crystal structure is continuously or discontinuously layeredon a continuous or discontinuous layer having at least one crystalstructure selected from the group consisting of epsilon crystalstructures and beta crystal structures.
 4. The chamber wall according toclaim 2, wherein when the ratio of the weight of the crystal structureconstituting the refractory metal monocarbide layer (Wm) to the weightof the crystal structure constituting the refractory metal semicarbidelayer (Ws) is defined as X (Wm/Ws), X is equal to or lower than 5 (whereWm and Ws are determined by multi-phase electron backscatter diffraction(EBSD) analysis).
 5. The chamber wall according to claim 1, wherein theweight of the base material (Ww), the weight of the crystal structureconstituting the refractory metal monocarbide layer (Wm), and the weightof the crystal structure constituting the refractory metal semicarbidelayer (Ws) are in a ratio of 90-95:0.8-4:9.2-1 (Ww:Wm:Ws) (where Ww, Wm,and Ws are determined by multi-phase electron backscatter diffraction(EBSD) analysis).
 6. The chamber wall according to claim 1, wherein thesemicarbide coating layer has a minimum thickness of 2 μm and a maximumthickness of 300 μm.
 7. An ion generating device comprising the chamberwall according to claim
 1. 8. A slit member comprising a slit throughwhich ion beams are emitted from an ion generating device for an ionimplanter wherein a slit portion formed with the slit has a refractorymetal material as a base material forming its shape and has a coatingstructure comprising a semicarbide layer on at least one surface of thebase material.
 9. The slit member according to claim 8, wherein thecoating structure comprising a semicarbide layer comprises a refractorymetal carbide structure in which a continuous or discontinuousrefractory metal monocarbide layer is layered on a continuous ordiscontinuous refractory metal semicarbide layer.
 10. The slit memberaccording to claim 8, wherein the coating structure comprising asemicarbide layer comprises a refractory metal carbide structure inwhich a continuous or discontinuous layer having a hexagonal crystalstructure is continuously or discontinuously layered on a continuous ordiscontinuous layer having at least one crystal structure selected fromthe group consisting of epsilon crystal structures and beta crystalstructures.
 11. The slit member according to claim 9, wherein when theratio of the weight of the crystal structure constituting the refractorymetal monocarbide layer (Wm) to the weight of the crystal structureconstituting the refractory metal semicarbide layer (Ws) is defined as X(Wm/Ws), X is equal to or lower than 5 (where Wm and Ws are determinedby multi-phase electron backscatter diffraction (EBSD) analysis). 12.The slit member according to claim 8, wherein the weight of the basematerial (Ww), the weight of the crystal structure constituting therefractory metal monocarbide layer (Wm), and the weight of the crystalstructure constituting the refractory metal semicarbide layer (Ws) arein a ratio of 90-95:0.8-4:9.2-1 (Ww:Wm:Ws) (where Ww, Wm, and Ws aredetermined by multi-phase electron backscatter diffraction (EBSD)analysis).
 13. The slit member according to claim 8, wherein thesemicarbide coating layer has a minimum thickness of 2 μm and a maximumthickness of 300 μm.
 14. An ion generating device comprising the slitmember according to claim 8.